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A physical model based on band energy theory was developed to illustrate the origin of the photoresponse at 0 V in our device.Our findings provide a new route to realizing self-powered photodetectors.Interestingly, the results show a significant role that incident wave angle can play on both the incident light enhancements.
These Zn O photodetectors exhibit attractive photovoltaic characteristics at 0 V bias.
More interestingly, with increasing the asymmetric ratio (the width of wide fingers : the width of narrow fingers) of the interdigitated electrodes, the responsivity of the Zn O self-powered UV photodetectors was enhanced obviously, reaching as high as 20 m A W when the asymmetric ratio was 20 : 1.
The goal of this research is to utilize the plasmonic phenomenon by using plasmonic gratings to develop and improve detectivity of metal-semiconductor-metal photodetectors (MSM-PDs) and sensitivity of SERS.
The dissertation includes the study of the substrate type ‒ Si O2 and Si O2/Si for SERS applications, and Ga As substrates for MSM PDs ‒ on the optical enhancement.
Integration of photonics in the back-end-of-line (BEOL) of a standard CMOS process enables the advantages of optical interconnects while benefiting from the low cost of monolithic integration.