Msm Photodetector Thesis

A physical model based on band energy theory was developed to illustrate the origin of the photoresponse at 0 V in our device.Our findings provide a new route to realizing self-powered photodetectors.Interestingly, the results show a significant role that incident wave angle can play on both the incident light enhancements.

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These Zn O photodetectors exhibit attractive photovoltaic characteristics at 0 V bias.

More interestingly, with increasing the asymmetric ratio (the width of wide fingers : the width of narrow fingers) of the interdigitated electrodes, the responsivity of the Zn O self-powered UV photodetectors was enhanced obviously, reaching as high as 20 m A W when the asymmetric ratio was 20 : 1.

The goal of this research is to utilize the plasmonic phenomenon by using plasmonic gratings to develop and improve detectivity of metal-semiconductor-metal photodetectors (MSM-PDs) and sensitivity of SERS.

The dissertation includes the study of the substrate type ‒ Si O2 and Si O2/Si for SERS applications, and Ga As substrates for MSM PDs ‒ on the optical enhancement.

Integration of photonics in the back-end-of-line (BEOL) of a standard CMOS process enables the advantages of optical interconnects while benefiting from the low cost of monolithic integration.

They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. Silicon photonics has emerged as a leading technology to overcome the bandwidth and energy efficiency bottlenecks of standard metal interconnects.This research can benefit many areas of nanoscience and optics, including plasmonic applications, such as, super lenses, nano-scale optical circuits, optical filters, surface plasmon enhanced photo-detectors solar cells, imaging sensors, charge-coupled devices (CCD), and optical-fiber communication systems.Several parameters, wire widths and thickness, gap space, taper angle, and the incident wavelength and angle, were investigated.The specific detectivity of our devices under UV-illumination reaches values of up to 5.3 × 10 Jones.We attribute this high specific detectivity to the properties of the mesoporous Ga N/metal contact interface: the trapping of photo-generated holes at the interface lowers the Schottky barrier height thus causing a large internal gain.Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Haidian District, Beijing, P. China E-mail: [email protected] Photodetectors for the ultraviolet (UV) range of the electromagnetic spectrum are in great demand for several technologies, but require the development of novel device structures and materials.Here we report on the high detectivity of UV photodetectors based on well-ordered laterally mesoporous Ga N.To learn more or modify/prevent the use of cookies, see our Cookie Policy and Privacy Policy.State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road 3888, Changchun, People's Republic of China E-mail: [email protected], [email protected] We demonstrate a novel type of Zn O self-powered photodetector based on the asymmetric metal-semiconductor-metal (MSM) structure: one Au interdigitated electrode with wide fingers and the other one with narrow fingers.By continuing to use this site, you consent to the use of cookies.We use cookies to offer you a better experience, personalize content, tailor advertising, provide social media features, and better understand the use of our services.